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 1 www.fairchildsemi.com ?2007 Fairchild Semiconductor Cor poration FFPF08S60S Rev. C1 FFPF08S60S — STEALTH? II Diode FFPF08S60S Features ? Stealth Recovery trr = 30 ns (@ IF = 8 A) ? Max Forward Voltage, VF = 3.4 V (@ T C = 25°C) ? 600 V Reverse Voltage and High Reliability Applications ? General Purpose ? SMPS ? Boost Diode in Continuous Mode Power Factor Corrections ? Power Switching Circuits 8 A, 600 V, STEALTH? II Diode The FFPF08S60S is STEALTH? II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Pin Assignments Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics TC = 25°C unless otherwise noted Package Marking and Ordering Information 1. Cathode 2. Anode TO-220F-2L 1 1. Cathode 2. Anode 2 Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current @ TC = 95 °C8A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 80 A TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C Symbol Parameter Max Unit RθJC Maximum Thermal Resistance, Junction to Case 3.4 °C/W Device Marking Device Package Reel Size Tape Width Quantity F08S60S FFPF08S60STU TO-220F-2L - - 50 ? RoHS Compliant Description November 2013 |